Introduction
AlGaN/GaN HEMTs, ideal for RF and microwave power amplifiers due to high power-handling, face limitations with a negative threshold voltage. Shifting to enhancement mode is crucial. Current methods, like gate recess or fluorine ion implantation, induce lattice damage. A proposed approach involves monolayer doping with fluoride-containing molecules, avoiding lattice damage. This novel method allows precise control of threshold voltages during fabrication, enhancing flexibility. The upcoming year will see the optimization of threshold voltage using fluorine-containing molecular doping to create an AlGaN/GaN FinFET device. This project aims to understand and validate the performance and reliability of this innovative threshold voltage tuning process, potentially advancing next-gen transistors for 6G communication and low-orbit satellite circuit development. The success of this one-year project could solidify Taiwan's leadership in the global semiconductor industry.