Introduction
MOCVD is a chemical vapor deposition method used to produce single- or polycrystalline thin films. In MOCVD ultrapure precursor gasses are injected into a reactor, usually with a non-reactive carrier gas. MOCVD can grow films containing combinations of group III and group V, group II and group VI, group IV. This study utilizes the Simcenter STAR-CCM+ CFD software for MOCVD numerical simulations. By varying the following boundary conditions, including the temperature and pressure within the chamber, the proportions and flow rates of input reactants, and the rotation speed applied to the wafer, the goal is to achieve a more uniform deposition of products on the wafer. The objective is to obtain an improved recipe through numerical simulations.